MMDF3N04HDR2G【PDF 1/8 页】MOSFET N-CH DUAL 3.4A 40V 8SOIC

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MMDF3N04HD

Power MOSFET

3 Amps, 40 Volts

N ? Channel SO ? 8, Dual

These miniature surface mount MOSFETs feature ultra low R DS(on)

and true logic level performance. They are capable of withstanding high

energy in the avalanche and commutation modes and the drain ? to ? source

diode has a very low reverse recovery time. These devices are designed

for use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc ? dc converters, and

power management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be used

for low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

Features

? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life

? Logic Level Gate Drive ? Can Be Driven by Logic ICs

? Miniature SO ? 8 Surface Mount Package ? Saves Board Space

? Diode Is Characterized for Use In Bridge Circuits

? Diode Exhibits High Speed, With Soft Recovery

? I DSS Specified at Elevated Temperature

? Mounting Information for SO ? 8 Package Provided

? Avalanche Energy Specified

? This is a Pb ? Free Device

MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

Rating Symbol Value Unit

Drain ? to ? Source Voltage V DSS 40 Vdc

V (BR)DSS

40 V

http://onsemi.com

R DS(on) TYP I D MAX

80 m W @ TBD 3.0 A

N ? Channel

MARKING

DIAGRAM

SO ? 8 D3N04H

CASE 751 AYWW G

STYLE 11 G

Drain ? to ? Gate Voltage (R GS = 1.0 M W )

Gate ? to ? Source Voltage ? Continuous

Drain Current

? Continuous @ T A = 25 ° C (Note 1)

? Continuous @ T A = 70 ° C (Note 1)

? Pulsed Drain Current (Note 3)

Total Power Dissipation @ T A = 25 ° C (Note 1)

Linear Derating Factor (1)

Total Power Dissipation @ T A = 25 ° C (Note 2)

Linear Derating Factor (2)

V DGR

V GS

I D

I DM

P D

± 20

3.4

3.0

2.0

1.39

11.11

Vdc

Adc

Apk

mW/ ° C

D3N04H = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb ? Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

Source ? 1 1 8 Drain ? 1

Operating and Storage Temperature Range

Single Pulse Drain ? to ? Source Avalanche

Energy ? Starting T J = 25 ° C (V DD = 25 Vdc,

V GS = 10 Vdc, Peak I L = 9.0 Apk,

L = 4.0 mH, V DS = 40 Vdc)

T J , T stg

E AS

? 55 to 150

162

° C

Gate ? 1

Source ? 2

Gate ? 2

Drain ? 1

Drain ? 2

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Rating

Thermal Resistance, (PCB Mount)

? Junction ? to ? Ambient, (Note 1)

? Junction ? to ? Ambient, (Note 2)

Symbol

R q JA

Typ

Max

62.5

Unit

° C/W

Device

MMDF3N04HDR2G

Package

SO ? 8

(Pb ? Free)

Shipping ?

2500 Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When mounted on 1 ″ square FR ? 4 or G ? 10 board (V GS = 10 V, @ 10 Secs)

2. When mounted on minimum recommended FR ? 4 or G ? 10 board (V GS = 10 V,

@ Steady State)

3. Repetitive rating; pulse width limited by maximum junction temperature.

?For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

? Semiconductor Components Industries, LLC, 2011

October, 2011 ? Rev. 5

Publication Order Number:

MMDF3N04HD/D

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